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Free carrier scattering mechanism in Bi2Se3 crystals

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The “single valley” model proposed byKöhler andLandwehr is used for the calculation of transport parameters corresponding to “pure” Bi2Se3 crystals. From the measurements of transmission, reflectivity and the Hall constant the effective masses are determined,m ⊥c =0·13m 0 andm ∥c=0·56m 0; using a simplification described in the paper the Fermi level is calculated to lie 0·14 eV above the bottom of the conduction band. This result allows us to conclude that a mixed mechanism of free carrier scattering exists inn-Bi2Se3 crystals, viz., the scattering by acoustic phonons prevails contributing about 75% and the scattering on ionized impurities contributes the remaining 25%. This result applies to “pure” Bi2Se3 crystals with free electron concentration 2×1019cm−3.

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Authors and Affiliations

  1. Technical College of Chemical Technology, Leninovo nám 565, Pardubice, Czechoslovakia

    I. F. Bogatyrev, J. Horák & L. Tichý

  2. Institute of Electronics and Radio Engineering, Prague, Lumumbova 1, Praha 8, Czechoslovakia

    A. Vaško

Authors
  1. I. F. Bogatyrev
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  2. J. Horák
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  3. A. Vaško
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  4. L. Tichý
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Bogatyrev, I.F., Horák, J., Vaško, A. et al. Free carrier scattering mechanism in Bi2Se3 crystals. Czech J Phys 23, 1111–1117 (1973). https://doi.org/10.1007/BF01586850

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  • DOI: https://doi.org/10.1007/BF01586850

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