Skip to main content
SpringerLink
Log in

FGTO — A fine structured GTO-thyristor with improved switching characteristics

FGTO — Ein feinstrukturierter GTO-Thyristor mit verbessertem Schaltverhalten

  • Published:
Archiv für Elektrotechnik Aims and scope Submit manuscript

Contents

A fine structured GTO thyristor, abbreviated FGTO, has been developed to improve the switching characteristics. The new device has a cathode finger width of only 20 μm and can be turned off without a negative gate bias at an anode current level of more than 200 A/cm2. The turn-off time can be shortened down tot off ≦500 ns by increasing the negative gate current. A snubber circuit is not necessary to turn off the FGTO's. The maximum rate of rise of anode voltage du/dl reaches more than 10 kV/μs. Analytical models are developed to describe the turn-off transients of the FGTO's. Good agreement between the theoretical and experimental results could be achieved.

Übersicht

Zur Verbesserung des Schaltverhaltens ist ein feinstrukturierter GTO-Thyristor, abgekürzt FGTO, entwickelt worden. Dieses neue Bauelement hat eine Kathoden-streifenbreite von nur 20 μm und kann ohne negative Gatevorspannung bei einer Anodenstromdichte von mehr als 200 A/cm2 abgeschaltet werden. Die Abschaltzeit läßt sich durch Erhöhung des negativen Gatestroms bis zut off ≦500 ns verkürzen. Beim Abschalten von FGTOs ist keine RC-Beschaltung erforderlich. Der maximale du/dl-Wert erreicht mehr als 10 kV/μs. Zur Beschreibung des Abschalt-verhaltens von FGTOs werden analytische Modelle entwickelt, die eine gute Übereinstimmung mit den Meßergebnissen liefern.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Azuma, M.; Kurata, M.; Takigami, K.: 2500-V 600-A gate turn-off thyristor (GTO). IEEE Trans. ED-28 (1981) 270–274

    Google Scholar 

  2. Nagano, T.; Yatsuo, T.; Okamura, M.: Characteristics of a 3000 V, 1000 A gate turn-off thyristor. IEEE Conf. Rec. of The Industrial Application Society Meeting (1981) 750–753

  3. Tada, A.; Hagino, H.: A high-voltage, high-power, fast switching gate turn-off thyristor. in IEDM Tech. Dig. (1982) 66–73

  4. Yatsuo, T.; Nagano, T.; Fukui, H.; Okamura, M.; Sakurada, S.: Ultrahigh-voltage high-current gate turn-off thyristors. IEEE Trans. ED-31 (1984) 1681–1686

    Google Scholar 

  5. Bechteler, M.: The gate-turnoff thyristor (GTO). Siemens Forsch.-u. Entwickl.-Ber. 14 (1985) 39–44

    Google Scholar 

  6. Hashimoto, O.; Kirihata, H.; Watanabe, M.; Nishiura, A.; Tagami, S.: Turn-on and turn-off characteristics of a 4.5-kV 3000-A gate turn-off thyristor. IEEE Conf. Rec. of The Industrial Application Society Meeting (1985) 876–881

  7. Wolley, E. D.: Gate turn-off in p-n-p-n devices. IEEE Trans. ED-13 (1966) 590–597

    Google Scholar 

  8. Ohashi, H.; Nakagawa, A.: A study in GTO turn-off failure mechanism. in IEDM Tech. Dig. (1981) 414–417

  9. Nakagawa, A.; Ohashi, H.: A study on GTO turn-off failure mechanism — a time- and temperature-dependent 1-D model analysis. IEEE Trans. ED-31 (1984) 273–279

    Google Scholar 

  10. Azuma, M.; Kurata, M.; Ohashi, H.: Design considerations for high power GTOs. Jap. Jour. of Appl. Phys. 20 (1981) 93–98

    Google Scholar 

  11. Nakagawa, A.; Navon, D. H.: A time- and temperature-dependent simulation of the GTO thyristor turn-off process. in IEDM Tech. Dig. (1982) 496–499

  12. Nakagawa, A.; Navon, D. H.: A time- and temperature-dependent 2-D simulation of the GTO thyristor turn-off process. IEEE Trans. ED-31 (1984) 1156–1163

    Google Scholar 

  13. Nakagawa, A.: A time- and temperature-dependent two-dimensional simulation of GTO turnoff process II — inductive load case. Solid-State Electron. 28 (1985) 677–687

    Google Scholar 

  14. Palm, E.; Van de Wiele, F.: Current lines and accurate contact current evaluation in 2-D numerical simulation of semiconductor devices. IEEE Trans. ED-32 (1985) 2052–2059

    Google Scholar 

  15. Fukui H.; Yaginuma, T.: Two-dimensional numerical analysis of turn-off process in a GTO under inductive load. IEEE Trans. ED-32 (1985) 1830–1834

    Google Scholar 

  16. Wiese, U.: IR-Untersuchungen an feinstrukturierten Halbleiterbauelementen. Diplomarbeit, TU Berlin, 1990

  17. Qu, N.: Entwicklung und Untersuchung von Mikro-GTOs. Dissertation, TU Berlin, 1990

Download references

Author information

Authors and Affiliations

  1. Institut für Werkstoffe der Elektrotechnik, Technische Universität Berlin, Jebensstraße 1, W-1000, Berlin 12, FRG

    W. Gerlach &  N. Qu

Authors
  1. W. Gerlach
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. N. Qu
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Gerlach, W., Qu, N. FGTO — A fine structured GTO-thyristor with improved switching characteristics. Archiv f. Elektrotechnik 74, 433–444 (1991). https://doi.org/10.1007/BF01577465

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01577465

Keywords

Search

Navigation