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Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors

  • Physics of Semiconductor Devices
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Abstract

The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4H-SiC thyristors results in the dependence of the gate switch-on current on the thyristor parameters, with this dependence being fundamentally different from that in conventional silicon thyristors.

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Authors and Affiliations

  1. All-Russia Electrotechnical Institute, Moscow, 111250, Russia

    S. N. Yurkov, T. T. Mnatsakanov & A. G. Tandoev

  2. Ioffe Physical–Technical Institute, St. Petersburg, 194021, Russia

    M. E. Levinshtein

  3. Cree Inc., 4600 Silicon Dr., Durham, NC, 27703, USA

    J. W. Palmour

Authors
  1. S. N. Yurkov
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  2. T. T. Mnatsakanov
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  3. M. E. Levinshtein
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  4. A. G. Tandoev
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  5. J. W. Palmour
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Corresponding author

Correspondence to M. E. Levinshtein.

Additional information

Original Russian Text © S.N. Yurkov, T.T. Mnatsakanov, M.E. Levinshtein, A.G. Tandoev, J.W. Palmour, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 234–239.

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Yurkov, S.N., Mnatsakanov, T.T., Levinshtein, M.E. et al. Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors. Semiconductors 51, 225–231 (2017). https://doi.org/10.1134/S1063782617020257

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  • DOI: https://doi.org/10.1134/S1063782617020257

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