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Future developments for Terahertz Schottky barrier mixer diodes

Zukünftige Entwicklungen für Terahertz-Schottky-Barrier-Dioden

  • Terahertz-Technology
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Contents

With the steady improvement of whisker contacted GaAs Schottky barrier mixer diodes during the recent years, the frequency range for heterodyne detection has been extended towards frequencies as high as 2.5 THz. However, whisker contacted devices show reliability and handling problems, and space qualification is extremely difficult. Furthermore, whiskered diodes cannot be integrated. This paper shows future planar concepts suitable for THz heterodyne detection in order to overcome the above problems with whisker contacted diodes.

Übersicht

Durch eine fortlaufende Verbesserung von whiskerkontaktierten GaAs-Schottky-Barrier-Mischerdioden konnte der Frequenzbereich für die heterodyne Detektion bis auf 2.5 THz erweitert werden. Neben schwieriger Handhabung zeigen whiskerkontaktierte Bauelemente jedoch Zuverlässigkeits- und Stabilitätsprobleme und sind nicht integrierbar. Als Lösung werden Konzepte für planare Dioden vorgestellt und ihre Eignung für Terahertz-Mischeranwendungen diskutiert.

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Authors and Affiliations

  1. Institut für Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstr. 25, D-64283, Darmstadt, Germany

    A. Grüb, A. Simon, V. Krozer & H. L. Hartnagel

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  1. A. Grüb
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  2. A. Simon
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  3. V. Krozer
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  4. H. L. Hartnagel
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Grüb, A., Simon, A., Krozer, V. et al. Future developments for Terahertz Schottky barrier mixer diodes. Archiv f. Elektrotechnik 77, 57–59 (1993). https://doi.org/10.1007/BF01574924

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  • DOI: https://doi.org/10.1007/BF01574924

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