Abstract
PhotoLuminescence (PL) measurement techniques have been used to investigate on MOCVD grown P-doped GaAs/Al x Ga1−x As(x = 0.3) Multiple Quantum Wells (MQW). The spectra reveal extrinsic luminescence characteristics of e-A0 transitions for interface and centre of well acceptors in addition to both bound and free exciton emissions.
Similar content being viewed by others
References
G. Bastard: Phys. Rev. B24, 4714 (1981)
W.T. Masselink, Y.C. Chang, H. Morkoc: Phys. Rev. B32, 5190 (1985)
W.T. Masselink, Y.C. Chang, H. Morkoc, D.C. Reynolds, C.W. Litton, K.K. Bajaj, P.W. Yu: Solid State Electron.29, 205 (1986)
A. Pasquarello, L.C. Andreani, R. Buczko: Phys. Rev. B40, 5602 (1989)
R.C. Miller, D.A. Kleinman, W.A. Nordland, A.C. Gossard: Phys. Rev. Lett. B22, 863 (1980)
C. Weisbuch, R.C. Miller, R. Dingle, A.C. Gossard, W. Wiegman: Solid State Commun.37, 219 (1981)
R.C. Miller, A.C. Gossard, W.T. Tsang, O. Munteanu: Phys. Rev. B25, 3871 (1982)
R.C. Miller, A.C. Gossard, W.T. Tsang, O. Munteanu: Solid State Commun.43, 519 (1982)
R.C. Miller, W.T. Tsang, O. Munteanu: Appl. Phys. Lett.41, 374 (1982)
B. Lambert, B. Deveaud, A. Regreny, G. Talalaeff: Solid State Commun.43, 443 (1982)
P. Dawson, G. Duggan, H.T. Ralph, K.K. Woodbridge: Phys. Rev. B28, 7381 (1983)
L. Goldstein, Y. Horikoshi, S. Tarucha, H. Okamoto: Jpn. J. Appl. Phys.22, 1489 (1983)
B. Deveaud, J.Y. Emmery, A. Chomette, B. Lambert, M. Baudet: Appl. Phys. Lett.45, 1078 (1984)
J. Christen, D. Bimberg, A. Steckenborn, G. Weimann: Appl. Phys. Lett.44, 84 (1984)
D.C. Reynolds, K.K. Bajaj, C.W. Litton, P.W. Yu, J. Singh, W.T. Masselink, R. Fischer, H. Morkoc: Appl. Phys. Lett.46, 51 (1985)
G.C. Rune, P.O. Holtz, M. Sundaram, J.L. Merz, A.C. Gossard, B. Monema: Phys. Rev. B44, 4010 (1991)
The samples were obtained from the University of Essex in Britain Any publication on this MQW ingot by the group in Essex not known to the author in hereby referenced
J.S.A. Adelabu: Physica B (in press)
J.S.A. Adelabu: Optical properties of semiconductor multiple quantum well systems. Ph. D. Thesis, University of Essex (1987)
J.S.A. Adelabu: Physica B183, 264 (1993)
M.D. Sturge: Phys. Rev.127, 768 (1962)
D.E. Hill: Phys. Rev. A133, 866 (1964)
H.C. Casey Jr., D.D. Sell, W. Wecht: J. Appl. Phys.46, 250 (1974)
H.C. Casey, M.B. Panish: InHeterostructure Lasers, Part A, Fundamentals (Academic, New York 1978) p. 189
N.K. Dryapiko, V.F. Kovalenko, G.P. Peka: Sov. Phys.Semicond.17, 541 (1983)
H. Iwamura, H. Kobayash, H. Okamoto: Jpn. J. Appl. Phys.23, 795 (1984)
R.C. Miller, D.A. Kleinman, W.T. Tsang, A.C. Gossard: Phys. Rev. B24, 1134 (1981)