Abstract
InP implanted with 200 keV Fe ions to a dose of 1 × 1014 atoms/cm2 has been investigated by Transmission Electron Microscopy (TEM). The as-implanted sample exhibits an amorphous surface region. At the annealing temperature of 650°C, nearly complete solidphase epitaxial regrowth is achieved only for annealing times greater than 1.5 h. For annealing times up to 2 h, however, the samples still contain extended defects such as stacking-fault tetrahedra of vacancy-type and dislocation loops of interstitial-type, mostly concentrated in a band which corresponds to the region of transition between amorphous top layer and crystalline substrate, as was detected in the as-implanted sample. Stacking-fault tetrahedra and loops have also been observed above and below this band, respectively. The origin of these defects is discussed.
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References
M. Gauneau, H. L'Haridon, A. Rupert, M. Salvi: J. Appl. Phys.53, 6823 (1982)
H. Ullrich, A. Knecht, D. Bimberg, H. Krautle, W. Schlaak: J. Appl. Phys.70, 2604 (1991)
H. Ullrich, A. Knecht, D. Bimberg, H. Krantle, W. Schlaak: J. Appl. Phys.72, 3514 (1992)
A. Gasparotto, A. Camera, G. Arzenton, M. Tromby, S. Pellegrino, F. Vidimari, M. Caldironi: Nucl. Instrum. Methods B80/81, 773 (1993)
P. Auvray, A. Guivarc'h, H. L'Haridon, G. Pelous, M. Salvi, P. Henoc: J. Appl. Phys.53, 6202 (1982)
P. Zheng, M.-O. Ruault, O. Kaitasov, J. Creston, B. Descouts, P. Kranz, N. Duhamel: J. Phys. D23, 877 (1990)
P. Zheng, M.-O. Ruault, M.F. Denanot, B. Descouts, P. Kranz: J. Appl. Phys.69, 197 (1991)
P. Kringhøj, J.L. Hausen, S.Yu. Shiryaev: J. Appl. Phys.72, 2249 (1992)
P. Müller, T. Bachmann, E. Wendler, W. Wesch, U. Richter: Mater. Res. Soc. Symp. Proc.135, 119 (1994)
S.A. Schwarz, B. Schwartz, T.T. Sheng, S. Singh, B. Tell: J. Appl. Phys.58, 1698 (1985)
F. Vidimari, M. Caldironi, A. Di Paola, R. Chen, S. Pellegrino: Electron. Lett.27, 816 (1991)
N.G. Chew, A.G. Cullis: Ultramicrosc.23, 175 (1987)
S. Amelinckx, J. van Landuyt: InDiffraction and Imaging Techniques in Material Science, 2nd edn., ed by S. Amelinckx, R. Gevers, J. van Landuyt (North-Holland, Amsterdam 1978) p. 107
B.C. De Cooman, S. McKernan, C.B. Carter, J.R. Ralston, G.W. Wicks, L.F. Eastman: Philos. Mag. Lett.56, 85 (1987)
W. Coene, H. Bender, S. Amelinckx: Philos. Mag. A52, 369 (1985)
C.D. Meekison, D.P. Gold, G.R. Booker, C. Hill, D.R. Boys: IOP Conf. Ser.100, 507 (1989)
P.S. Dobson, P.J. Goodhew, R.E. Smallman: Philos. Mag.16, 9 (1967)
J.L. Strudel, F. Vincotte, J. Washburn: Appl. Phys. Lett.3, 148 (1963)
M.H. Loretto, L.M. Clarebrough, P. Humble: Philos. Mag.13, 953 (1966)
U. Dahmen: Ultramicrosc.30, 102 (1989)
J. Van Landuyt, A. De Veirman, J. Vanhellemont, H. Bender: IOP Conf. Ser.100, 1 (1989)
L.A. Christel, J.F. Gibbons: J. Appl. Phys.52, 5050 (1981)
H. Bender, A. De Veirman, J. Van Landuyt, S. Amelinckx: Appl. Phys. A39, 83 (1986)
K.S. Jones, S. Prussin, and E.R. Weber: Appl. Phys. A45, 1 (1988)
J.J. Comer, D. Eirug Davies, J.P. Lorenzo: J. Electrochem. Soc.127, 1827 (1980)
N. Moriya, R. Kalish, G. Bahir: J. Appl. Phys.67, 2157 (1990)
R.S. Bhattacharya, A.K. Rai, P.P. Pronoko, J. Narayan, S.C. Ling, S.R. Wilson: J. Phys. Chem. Solids44, 61 (1983)
W.G. Opyd, J.F. Gibbons, J.C. Bravman, M.A. Parker: Appl. Phys. Lett.49, 974 (1986)
M.G. Grimaldi, B.M. Paine, M-A. Nicolet, D.K. Sadana: J. Appl. Phys.52, 4038 (1981)
S.S. Kular, B.J. Sealy, K.G. Stephens, D. Sadana, G.R. Booker: Solid-State Electron.23, 831 (1980)