Abstract
A simplified analogue to an Ion-Sensitive Field-Effect Transistor (ISFET) was tested in the presence of ions. The gate electrode in an ISFET is an aqueous solution, unlike in a Metal-Oxide Field-Effect Transistor (MOSFET) where the gate is a metal. A problem with the ISFET is that the insulating oxide between the silicon and the solution is slowly penetrated by various ions such as OH− or Na+ causing a change in the characteristics of the device.
The application of thin alumina platelets and thin MoS2 films as a protective insulating layer, when deposited over the insulating silicon oxide, was tested against the penetration of ions. It is shown that there is a significant decrease in the ion penetration through to the silicon oxide layer, depending on the applied bias, when the oxide is covered with thin alumina or MoS2 layers. The effect of different ions and ion concentrations are presented. Suggestions for further improvement are made.
Similar content being viewed by others
References
S.R. Morrison, M.J. Madou:Chemical Sensing with Solid State Devices (Academic, New York 1989) pp. 325–340
B.K. Miremadi, S.R. Morrison: Mater. Res. Bul.25, 1139 (1990)
B.K. Miremadi, S.R. Morrison: US Patent No. 5/072/886, Canadian Patent No. 1317087
B.K. Miremadi, T. Cowan, S.R. Morrison: J. Appl. Phys.69, 6373 (1991)
J.L. Sprague, J.A. Minahan, O.J. Wied: J. Electrochem. Soc.109, 94 (1962)
D. Yang:Electrical properties of MOS 2 films. Ph.D. Thesis, Simon Fraser University, Burnaby (1993)
R. Divigalpitiya, R.F. Frindt, S. Roy Morrison: Science246, 369 (1989)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Miremadi, B.K., Morrison, S.R. & Colbow, K. Stabilization of silicon-based devices in ion-containing media using thin Al2O3 platelets and MoS2 oriented thin films. Appl. Phys. A 62, 39–42 (1996). https://doi.org/10.1007/BF01568085
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF01568085