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Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth

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Abstract

Carbon-doped GaAs with dopant concentrations up to about 1020 cm−3 has been grown by molecular beam epitaxy. Above a critical carbon concentration, which depends on the deposition parameters, the surface deteriorates and loses its mirror-like appearance. From X-ray diffractometry and scanning electron microscopy, a diagram is established separating two areas with rough and mirror-like surface morphologies. The electrical properties as well as the morphology of GaAs : C can be simultaneously improved by a careful adjustment of the deposition parameters according to this diagram.

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Author notes

  1. H. Nörenberg

    Present address: Department of Materials, University of Oxford, Parks Road, OX1 3PH, Oxford, UK

Authors and Affiliations

  1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin, Germany

    H. Nörenberg, A. Mazuelas, K. Hagenstein, R. Hey & H. T. Grahn

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  1. H. Nörenberg
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  2. A. Mazuelas
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  3. K. Hagenstein
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  4. R. Hey
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  5. H. T. Grahn
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Additional information

On leave at: Tokyo Institute of Technology, Research Center for Quantum Effect Electronics, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan

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Nörenberg, H., Mazuelas, A., Hagenstein, K. et al. Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth. Appl. Phys. A 62, 459–461 (1996). https://doi.org/10.1007/BF01567117

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  • DOI: https://doi.org/10.1007/BF01567117

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