Summary
The theory of the acousto-electric effect is extended to a mechanically shock strained semiconductor by use of the Boltzmann equation with Maxwellian distribution of free electrons. From the linearized equation the explicit expression for the electric field behind the shock front is found in terms of Hermitian polynomials. The result suggests that particularly at low temperatures one may observe an appreciable current behind the shock front.
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Horie, Y. Boltzmann equation and wave-particle drag in a shock strained semiconductor. J Eng Math 3, 55–62 (1969). https://doi.org/10.1007/BF01540830
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DOI: https://doi.org/10.1007/BF01540830