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Influence of ion implantation on the thermal diffusivity of semiconductors

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Abstract

The influence of ion implantation on the thermal diffusivities of semiconductors are studied using the mirage effect. The dependences of the thermal diffusivities on the implantation doses are obtained. For silicon wafers implanted by boron, phosphorus and arsenic ions, with constant implantation energy, the thermal diffusivities decrease with increasing dose, when the doses are less than some critical values. The theoretical calculation results by using a one-dimensional multilayer model are in good agreement with the experimental ones. On the other hand, for gallium-arsenide wafers implanted with silicon ions, it is found experimentally that the thermal diffusivity increases with the implantation dose.

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Authors and Affiliations

  1. Institute of Acoustics and Laboratory of Modern Acoustics, Nanjing University, 210093, Nanjing, People's Republic of China

    L. Guo, S. Y. Zhang, X. R. Zhang, J. He & Z. N. Zhang

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  1. L. Guo
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  2. S. Y. Zhang
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  3. X. R. Zhang
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  4. J. He
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  5. Z. N. Zhang
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Guo, L., Zhang, S.Y., Zhang, X.R. et al. Influence of ion implantation on the thermal diffusivity of semiconductors. Appl. Phys. A 60, 395–398 (1995). https://doi.org/10.1007/BF01538340

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  • DOI: https://doi.org/10.1007/BF01538340

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