Depth Profiling of Electronic Transport Properties in $\mathrm{H}^{+}$-Implanted n-Type Silicon

Abstract

A depth profiling theory for electronic transport properties (carrier diffusivity and lifetime) in ion-implanted semiconductor wafers using infrared photocarrier radiometry (PCR) is proposed. The ion-implanted inhomogeneous sample was sliced into many virtual sub-layers along the depth direction so that the continuously variable electronic properties across the whole thickness can be considered as uniform in each incremental slice. A recursion relationship among the slices was obtained, and the overall PCR signal was built based on contributions from each slice. Experimental lifetime and electronic diffusivity reconstructions of depth profiles at two ion doses ($3\times 10^{14 }\,\mathrm{cm}^{-2 }{\text { and }}3\times 10^{15}\,\mathrm{cm}^{-2})$ and several implantation energies (from 0.75 MeV to 2.0 MeV) have been demonstrated.