Abstract
A detailed experimental investigation of a D.C. discharge in an argon-silanenitrogen gas mixture is undertaken using mainly spatially resolved spectroscopy. Discharge parameters are studied as functions of the gas mixture composition, and the influence of nitrogen concentration on the dissociation phenomena of SiH4 and on dehydrogenation mechanisms of the growing film surface is particularly discussed.
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Jauberteau, J.L., Duchesne, D., Girault, C. et al. Spectroscopic study of a D.C. discharge in an argon-silane-nitrogen gas mixture under silicon nitride thin film deposition conditions. Plasma Chem Plasma Process 10, 589–607 (1990). https://doi.org/10.1007/BF01447266
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DOI: https://doi.org/10.1007/BF01447266