Rate constants for the etching of gallium arsenide by atomic chlorine

Abstract

Known chlorine atom concentrations were prepared in a discharge flow system and used to etch the (100) face of a gallium arsenide single crystal. The etch rate was monitored by mass spectrometry, laser interferometry, and surface proftlometry. In the temperature range from 90 to 160°C the reaction can be described by the rate law

$$Etch rate = kP_{Cl} $$

where

$$k = 9 \times 10^{(6 \pm 0.5)} \mu m min^{ - 1} Torr^{ - 1} e^{ - 9 \pm 1)kcal/RT} $$