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Zeitschrift für Physik A Hadrons and nuclei

, Volume 237, Issue 3, pp 252–262 | Cite as

Momentum and energy relaxation of warm carriers in semiconductors

  • Karlheinz Seeger
  • Karl F. Hess
Article

Abstract

Non-linear microwave optics of semiconductors is influenced by two relaxation times τ m and τɛ which determine energy and momentum relaxation. In the range of warm carriers τɛ is assumed to be not dependent and τ m linearly dependent on energy. The simple model of band structure of semiconductors and a monoenergetic energy distribution of carriers are assumed. The calculation yields the frequency dependence of the nonlinearity coefficient β as observed by Seeger with Morgan's experimental arrangement (parallel d.c. and a.c. electric fields) also at high frequencies and low temperatures. Furthermore, the h.f. behaviour of frequency multiplication and harmonic mixing are given.

Keywords

Phase Shift Fourier Component Energy Relaxation Nonlinear Part Full Curve 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1970

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
    • 3
  • Karl F. Hess
    • 1
    • 2
  1. 1.Ludwig Boltzmann-Institut für FestkörperphysikVienna
  2. 2.Institut für Angewandte Physik der Universität ViennaAustria
  3. 3.II. Physikalisches Institut der UniversitätWienGermany

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