Abstract
Non-linear microwave optics of semiconductors is influenced by two relaxation times τ m and τɛ which determine energy and momentum relaxation. In the range of warm carriers τɛ is assumed to be not dependent and τ m linearly dependent on energy. The simple model of band structure of semiconductors and a monoenergetic energy distribution of carriers are assumed. The calculation yields the frequency dependence of the nonlinearity coefficient β as observed by Seeger with Morgan's experimental arrangement (parallel d.c. and a.c. electric fields) also at high frequencies and low temperatures. Furthermore, the h.f. behaviour of frequency multiplication and harmonic mixing are given.
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For valuable advice and discussion we express our sincere gratitude to Prof. Dr. K. Baumann. For the numerical calculations computer facilities of the Institute for Numerical Mathematics of the T.H. Wien were used. This work is sponsored by the “Forschungsförderungsfonds der gewerblichen Wirtschaft” as well as the “Ludwig Boltzmann-Gesellschaft, Wien”.
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Seeger, K., Hess, K.F. Momentum and energy relaxation of warm carriers in semiconductors. Z. Physik 237, 252–262 (1970). https://doi.org/10.1007/BF01398639
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DOI: https://doi.org/10.1007/BF01398639