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Einfluß der Kristallorientierung auf die Plasmonenintensität in Ag und Si

The influence of crystal orientation on the intensity of plasmons in Ag and Si

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Zeitschrift für Physik B Condensed Matter

Abstract

In energy loss measurements of electrons on monocrystals of silver and silicon in transmission the intensity of the volume plasma loss (Ag 3.8 eV, Si 16.6 eV) is found to be dependent on the crystal orientation. By tilting the crystal relatively to the incident beam (in general some degrees) the intensities of the elastic peak (I el), the volume plasma peak (I v) and in Ag additionally that of the surface loss (I s) at 3.1 eV (damped by a carboncoating) show different variations.I s in Ag andI v in thick (>150 nm) Si is as expected proportional toI el, whereasI v in Ag and thin Si varies much stronger thanI el, so that the quotientI v/Iel is not a constant. Presumably an explanation of this phenomenon lies in the dynamic theory of electron diffraction including inelastic processes.

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Authors and Affiliations

  1. Institut für Angewandte Physik, Universität Hamburg, Jungiusstrasse 11, D-2000, Hamburg 36, Bundesrepublik Deutschland

    Jörg Pyrlik

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  1. Jörg Pyrlik
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Pyrlik, J. Einfluß der Kristallorientierung auf die Plasmonenintensität in Ag und Si. Z Physik B 31, 369–375 (1978). https://doi.org/10.1007/BF01351546

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  • DOI: https://doi.org/10.1007/BF01351546

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