Abstract
Microwave absorption measurements in theX andR † bands were performed in acoustoelectrically excited ZnO crystals at room temperature. In the resistivity range considered a frequency dependence of this absorption was found, confirming the prediction of the theory, that the microwave absorption in acoustoelectrical domains is mainly determined by the diffusion and the dielectric relaxation times. The experimental results were compared with theory, and average microfields of a strength of 15 kV/cm were obtained. These fields are generally high enough to produce excitonic Franz-Keldysh effect in ZnO.
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Work supported by the Ludwig Boltzmann Gesellschaft zur Förderung der wissenschaftlichen Forschung
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Sweid, M., Hess, K. Frequency dependent microwave absorption in acoustoelectric domains in ZnO. Z Physik B 24, 327–332 (1976). https://doi.org/10.1007/BF01351521
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DOI: https://doi.org/10.1007/BF01351521