Wechsellichtmethode zur Messung von Haftstellen-Einfangquerschnitten beim Cadmiumsulfid

Abstract

An extension of a method previously described is used to determine capture crosssections for shallow traps of CdS-crystals in the vicinity of the conduction band. The data are obtained by measurement of photoconductivity induced by sinusoidally modulated light ofλ ≈ 600 mμ. The results are as follows:σ ≈ 1,5 to 6 · 10⁻¹⁵ cm² for traps at 0.12 ev (below the conduction band);σ ≈ 5 to 9 · 10⁻¹⁵ cm² for traps between 0.2 and 0.6 ev;σ ≈ 10⁻¹⁴ to 10⁻¹³ cm² for traps at 0.7 to 0.8 ev.