Röntgenspektroskopische Untersuchung der Struktur des Valenzbandes von Silicium, Siliciumcarbid und Siliciumdioxid

Abstract

With a photon-counting concave grating spectrograph the SiL _2,3 emission bands of pure Si, SiC and SiO₂ (quartz) were investigated. The observed bands are in good agreement with recent measurements using photon-counting devices but differ markedly from those obtained with photographic registration.

The comparison of these SiL _2,3 bands with the corresponding SiKβ bands observed by other authors shows that the intensity distributions are more or less complementary. For Si and SiC the experimental results are compared with recent calculations of the electronic band structure. The agreement between the measuredK andL emission bands of silicon and the calculated density of states curve of silicon is satisfactory.