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Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

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Abstract

A thermodynamic calculation of the equilibrium composition of the gas phase Ga-As-Sn-Cl-H system was carried out. An estimate of the impurity composition of adsorbate layers was made. A study of the electrophysical and photoluminescent properties of tin-doped GaAs epitaxial layers was conducted. From a comparison of the calculated and experimental data, it follows that the dependence of trapping mechanisms for tin on the conditions of epitaxial growth corresponds to changes in the gas phase and adsorbate layer compositions. A mechanism is proposed in which the introduction of impurities into the layers in elemental and complex forms occurs due to capture of atomic and diatomic tin adsorbed on the surface.

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Authors and Affiliations

  1. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk

    I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko, M. P. Ruzaikin & V. N. Ryazanov

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  1. I. A. Bobrovnikova
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  2. M. D. Vilisova
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  3. L. P. Porokhovnichenko
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  4. M. P. Ruzaikin
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  5. V. N. Ryazanov
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 37–40, June, 1990.

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Bobrovnikova, I.A., Vilisova, M.D., Porokhovnichenko, L.P. et al. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes. Soviet Physics Journal 33, 491–494 (1990). https://doi.org/10.1007/BF01325005

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  • DOI: https://doi.org/10.1007/BF01325005

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