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Anisotropic transport properties of U4Cu4P7

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Zeitschrift für Physik B Condensed Matter

Abstract

The electrical resistivity of U4Cu4P7 for the current flowing in the basal plane of this tetragonal antiferromagnetic compound has been measured from 2 to 1000 K. Contrary to the case where the current flows along thec axis, we find an increasing resistivity with increasing temperature over the whole temperature range. This ferromagnetic-like behavior in the basal plane and the antiferromagnetic-like behavior perpendicular to it, is explained with the complex magnetic structure of the compound. The Hall effect forB parallel to thec axis shows an antiferromagnetic-like temperature dependence. The ordinary part of the Hall effect in the paramagnetic phase gives in an one-band model a carrier concentration of 0.7 holes per uranium atom, which is quite unique in uranium compounds by its sign and which results from the presence of two kinds of uranium atoms with different bonding, valence, magnetic moment and exchange. Quantitative differences between various samples of U4Cu4P7 are related to a mixed-layer stacking polytype of U4Cu4P7 and UCuP2 units.

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Author notes

  1. D. Kaczorowski

    Present address: Institute for Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 937, PL-59-950, Wrocław, Poland

Authors and Affiliations

  1. Laboratorium für Festkörperphysik, ETH-Hönggerberg, CH-8093, Zürich, Switzerland

    J. Schoenes, D. Kaczorowski & C. Beeli

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  1. J. Schoenes
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  2. D. Kaczorowski
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  3. C. Beeli
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Schoenes, J., Kaczorowski, D. & Beeli, C. Anisotropic transport properties of U4Cu4P7 . Z. Physik B - Condensed Matter 88, 135–140 (1992). https://doi.org/10.1007/BF01323564

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  • DOI: https://doi.org/10.1007/BF01323564

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