Abstract
High resolution and time resolved photoluminescence in low resistivity Cd dopedp-type InSe in the 32K–155K temperature range are reported. The photoluminescence spectra consist of a broad band that turns out to have three components with different lifetimes (less than 0.1 μs, 2.1±0.1 μs and 17±1 μs). For a given sample, the relative contribution of the components depends on the excitation conditions. The two components with longer lifetime have an asymmetric gaussian shape and a temperature dependence of both the intensity and the decay time which suggest that they are emitted by complex centers, in which the ground state originates from the Cd related acceptor. The fast component and the weak structures in the high energy tail of the broad band, with much shorter lifetime, are proposed to be due to distant donor-acceptor pair recombination.
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Martínez-Tomás, M.C., Muñoz, V., Andrés, M.V. et al. Time resolved photoluminescence of Cd-doped InSe. Z. Physik B - Condensed Matter 91, 25–30 (1993). https://doi.org/10.1007/BF01316704
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DOI: https://doi.org/10.1007/BF01316704