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Energy loss of warm and hot carriers in surface inversion layers of polar semiconductors

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Zeitschrift für Physik B Condensed Matter

Abstract

A theory for the “hot carrier” transport in surface inversion layers is presented, including scattering by polar optical phonons. Formulas for the current-voltage characteristics, the energy relaxation time, and the warm electron coefficientβ are given using Howard's wave function for the calculation of the matrix elements.

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References

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Authors and Affiliations

  1. Ludwig Boltzmann-Institut für Festkörperphysik and Institut für Angewandte Physik, Universität Wien, Strudlhofgasse 4, A-1090, Wien, Austria

    Erich Vass & Karl Hess

Authors
  1. Erich Vass
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  2. Karl Hess
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Additional information

The work was supported by the “Ludwig Boltzmann Gesellschaft zur Förderung der wissenschaftlichen Forschung” and by the “Fonds zur Förderung der wissenschaftlichen Forschung in Österreich”

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Vass, E., Hess, K. Energy loss of warm and hot carriers in surface inversion layers of polar semiconductors. Z Physik B 25, 323–325 (1976). https://doi.org/10.1007/BF01315247

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  • DOI: https://doi.org/10.1007/BF01315247

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