Abstract
Tunnel junctions ofPb-I-Al andSn-I-Al were implanted at low temperatures with Mn ions in the ppm region. The tunnel characteristicdI/dV was measured on the pure sample and on the alloy with different concentrations. A bound state is found in both systems at an energy 0.7Δ 0. Comparison with theory confirms, that the Kondo effect is not necessary for the existence of a bound state.
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Levin, H., Selisky, H., Heim, G. et al. Electron tunneling into ion implanted PbMn and SnMn alloys. Z Physik B 24, 65–71 (1976). https://doi.org/10.1007/BF01312874
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DOI: https://doi.org/10.1007/BF01312874