Abstract
Defects in Sb implanted ZnO single crystals have been studied by using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) and Raman scattering. Electrical properties of the samples were analyzed by Hall effect measurement. The results indicate that the annealed Sb-implanted sample is n-type with a free electron concentration of the same amplitude as the calculated implantation concentration. The well-known oxygen vacancy related deep level green PL band is suppressed in the as-implanted sample and recovers to the level close to the as-grown ZnO single crystal after annealing. These phenomena suggest that a large portion of as-implanted Sb atoms occupy oxygen lattice site in an unstable state and move to the interstitial site, forming the complex donor defect upon high temperature annealing, resulting in n-type conduction even if the implantation dose is quite high.
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Xie, H., Liu, T., Liu, J. et al. Implantation induced defects and electrical properties of Sb-implanted ZnO. Sci. China Technol. Sci. 58, 1333–1338 (2015). https://doi.org/10.1007/s11431-015-5868-2
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DOI: https://doi.org/10.1007/s11431-015-5868-2