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Electronic transition in thef-electron band of UAs1-x Sbx

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Zeitschrift für Physik B Condensed Matter

Abstract

Thex dependence of the low-temperature electronic specific heat in the UAs1-xSbx series gives evidence for an electronic transition involving the electron band with predominant 5f symmetry. This is indicated by a decrease of the electronic specific-heat parameter γ by a factor of 20 betweenx=0.5 andx=0.8. The transition does not destroy the metallic character of the compounds withx>0.8, as evidence by the value of γ and the temperature dependence of the electrical resistivity of USb.

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Author notes

  1. H. Rudigier

    Present address: Balzers AG, FL-9496, Balzers, Fürstentum Liechtenstein

Authors and Affiliations

  1. Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich — ETH, Hönggerberg, CH-8093, Zürich, Switzerland

    H. Rudigier, H. R. Ott, E. Felder & O. Vogt

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  1. H. Rudigier
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  2. H. R. Ott
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  3. E. Felder
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  4. O. Vogt
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Rudigier, H., Ott, H.R., Felder, E. et al. Electronic transition in thef-electron band of UAs1-x Sbx . Z. Physik B - Condensed Matter 67, 69–74 (1987). https://doi.org/10.1007/BF01307309

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  • DOI: https://doi.org/10.1007/BF01307309

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