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Calculation of the dielectric function for highly excited polar semiconductors

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Zeitschrift für Physik B Condensed Matter

Abstract

The optical dielectric function of an electron-hole plasma in highly excited polar semiconductors with a direct band gap is calculated by solving a Bethe-Salpeter equation for the polarization function. The screening of the Coulomb potential is treated in a damped phonon-plasmon-pole approximation. We include the complex dynamical self-energy corrections as well as electron-hole correlations.

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Authors and Affiliations

  1. Institut für Theoretische Physik der Universität Frankfurt-Main, Robert-Mayer-Straße 8-10, D-6000, Frankfurt-Main, Germany

    S. Schmitt-Rink, D. B. Tran Thoai & H. Haug

Authors
  1. S. Schmitt-Rink
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  2. D. B. Tran Thoai
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  3. H. Haug
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Additional information

Project of the Sonderforschungsbereich Frankfurt/Darmstadt, financed by special funds of the Deutsche Forschungsgemeinschaft

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Schmitt-Rink, S., Tran Thoai, D.B. & Haug, H. Calculation of the dielectric function for highly excited polar semiconductors. Z. Physik B - Condensed Matter 39, 25–31 (1980). https://doi.org/10.1007/BF01292634

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  • DOI: https://doi.org/10.1007/BF01292634

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