Abstract
By re-irradiation of ion-bombarded amorphous silicon at elevated temperatures structural modifications of the state of disorder can be achieved which allow a wide-ranging control of variable range hopping conductivity. In this way the conductivity of a-Si films can be increased by many orders of magnitude until metal-like conduction is obtained.
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Müller, G., Kalbitzer, S. & Pfeilsticker, R. Control of hopping conductivity by structural modification of amorphous silicon. Z. Physik B - Condensed Matter 39, 21–24 (1980). https://doi.org/10.1007/BF01292633
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DOI: https://doi.org/10.1007/BF01292633