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Silicon carbide refractories with a complex bond of Si2On, SiC, Si3N4

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Conclusions

The physical and chemical processes taking place during the firing of products obtained from silicon carbide and silicon largely depend on the gaseous medium.

When the articles are fired at 1400° C in a nitrogen atmosphere not containing oxygen or containing only small quantities of it (less than 0.05%) a bond is formed of silicon nitride.

During the firing of articles at 1400° C and nitrogen atmosphere containing about 2% oxygen, almost no nitride or oxynitride silicon is formed. Silica is formed in the form of cristobalite and a glassy film, and also we get a large amount of the silicon remainning in the free state.

When the articles are fired at 1550° C in a coke filling in a flame furnace, a bond of complex composition forms, which consists of cubic silicon carbide, oxynitride (Si2ON2), silicon nitride and cristobalite.

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Translated from Ogneupory, No. 5, pp. 50–56, May, 1967.

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Voronin, N.I., Krasotkina, N.I. & Fraifel'd, M.S. Silicon carbide refractories with a complex bond of Si2On, SiC, Si3N4 . Refractories 8, 319–323 (1967). https://doi.org/10.1007/BF01286488

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  • DOI: https://doi.org/10.1007/BF01286488

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