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Low threshold current proton-isolated (GaAl)As double heterostructure lasers

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Abstract

Very low threshold current laser sources are desirable for a number of potential applications including optical fibre telecommunications systems. Conventional proton-isolated stripe geometry (GaAl)As lasers can be designed to give threshold currents in the range 10–50 mA by proper optimization of device geometry. Experimentally, it is shown that such devices can be easily fabricated and bonded and that their characteristics are not adversely affected by the optimization procedure.

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Authors and Affiliations

  1. Post Office Research Centre, Martlesham Heath, IP5 7RE, Ipswich, Suffolk, UK

    A. G. Steventon, P. J. Fiddyment & D. H. Newman

Authors
  1. A. G. Steventon
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  2. P. J. Fiddyment
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  3. D. H. Newman
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Steventon, A.G., Fiddyment, P.J. & Newman, D.H. Low threshold current proton-isolated (GaAl)As double heterostructure lasers. Opt Quant Electron 9, 519–525 (1977). https://doi.org/10.1007/BF01208762

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  • DOI: https://doi.org/10.1007/BF01208762

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