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In situ measurement of silicon oxidation kinetics by monitoring spectrally emitted radiation

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Abstract

When a highly polished silicon wafer is thermally oxidized, its spectral emittance fluctuates systematically, as the protective silica film grows thicker. If the spectral intensity of the emitted radiation at a wavelength where silica is transparent is monitored, the film thickness can be obtained.

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Author notes

  1. Gerhard H. Schiroky

    Present address: Lanxide Corporation, Tralee Industrial Park, 19711, Newark, Delaware, USA

Authors and Affiliations

  1. GA Technologies, Inc., John Jay Hopkins Drive, 92121, San Diego, California, USA

    Gerhard H. Schiroky

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  1. Gerhard H. Schiroky
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Schiroky, G.H. In situ measurement of silicon oxidation kinetics by monitoring spectrally emitted radiation. J Mater Sci 22, 3595–3601 (1987). https://doi.org/10.1007/BF01161465

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  • DOI: https://doi.org/10.1007/BF01161465

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