Skip to main content
SpringerLink
Log in

Electron spectrum and intrinsic absorption of heavily doped n-GaAs

  • Published:
Soviet Physics Journal Aims and scope

Abstract

The article presents results of a numerical calculation, made with a computer, of several parameters and functions characterizing the electron spectrum of heavily doped semiconductors; in addition, the article presents theoretically calculated and experimentally obtained dispersion curves of the absorption coefficient in the region of interband transitions in heavily doped n-GaAs. The numerical calculation method is based upon the work of V. L. Bonch-Bruevich, who used Green functions. Calculations and experimental measurements were made for n-GaAs with free electron concentrations of 4.8·1018 cm−3 at temperatures of 10–610‡K. Agreement between the theoretically calculated and the experimentally obtained values of the absorption coefficient is observed in the edge region at photon energies exceeding the width of the forbidden band of the pure semiconductor.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literature cited

  1. V. L. Bonch-Bruevich, Fiz. Tverd. Tela,5, 1852 (1963).

    Google Scholar 

  2. V. L. Bonch-Bruevich, and R. Rozman, Fiz. Tverd. Tela,5, 2890 (1963).

    Google Scholar 

  3. V. L. Bonch-Bruevich, Problems of the Electron Theory of Heavily Doped Semiconductors, in: Subjects of Science. Solid-State Physics [in Russian], ed. by S. V. Tyablikov, Press of the All-Union Institute of Scientific and Technical Information, Moscow (1965).

    Google Scholar 

  4. I. M. Tsidil'kovskii, Electrons and Holes in Semiconductors [in Russian], Nauka, Moscow (1972).

    Google Scholar 

  5. Gallium Arsenide. Production, Properties, and Applications [in Russian], ed. by F. P. Kesamanly and D. N. Nasledov, Monograph, Nauka, Moscow (1973).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. A. M. Gor'ki Ural State University, USSR

    A. N. Levkov & G. G. Lomakin

Authors
  1. A. N. Levkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. G. Lomakin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 30–35, August, 1975.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Levkov, A.N., Lomakin, G.G. Electron spectrum and intrinsic absorption of heavily doped n-GaAs. Soviet Physics Journal 18, 1084–1088 (1975). https://doi.org/10.1007/BF01110025

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01110025

Keywords

Search

Navigation