Abstract
The kinetic characteristics of the surface charging of a semiconductor during adsorption are analyzed, due allowance being made for the recharging of the biographic surface states during the adsorption process. It is shown that the form of the kinetic curves depends very substantially on the relationship between the characteristic relaxation times of the adsorption and biographic surface states.
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Translated from Izvestiya Vysshikh Uehebnykh Zavedenii, Fizika, No. 2, pp. 116–120, February, 1975.
In conclusion, the author wishes to thank V. F. Kiselev and Yu. F. Novototskii-Vlasov for useful discussions of this work and valuable comments.
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Kozlov, S.N. Kinetics of the surface charging of a semiconductor during adsorption. Soviet Physics Journal 18, 242–245 (1975). https://doi.org/10.1007/BF01103936
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DOI: https://doi.org/10.1007/BF01103936