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Photoelectric and optical properties of thin films of ternary chalcogenides of the form MeISbX VI2

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Abstract

We have studied the photoconductivity and optical absorption of thin amorphous films of ternary chalcogenide compounds of the type MeISbX VI2 (where Me is Na, K, Rb and XVI is either S or Se) produced by thermal evaporation in a vacuum. The band gaps were determined by various methods. A regular increase in band gaps in the films was noted as the atomic number of the alkali metal increased.

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Authors and Affiliations

  1. V. I. Lenin Khar'kov Polytechnic Institute, USSR

    V. A. Bazakutsa, N. I. Gnidash, A. K. Kul'chitskaya & A. V. Salov

Authors
  1. V. A. Bazakutsa
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  2. N. I. Gnidash
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  3. A. K. Kul'chitskaya
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  4. A. V. Salov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 42–46, April, 1975.

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Bazakutsa, V.A., Gnidash, N.I., Kul'chitskaya, A.K. et al. Photoelectric and optical properties of thin films of ternary chalcogenides of the form MeISbX VI2 . Soviet Physics Journal 18, 472–475 (1975). https://doi.org/10.1007/BF01093235

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  • DOI: https://doi.org/10.1007/BF01093235

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