Skip to main content
SpringerLink
Log in

Oxidation of silicon by oxygen: a rate equation

  • Papers
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

A new rate equation fits data on the oxidation of silicon by oxygen. It can be derived from a model of molecular diffusion in the oxide layer and the influence of strain on this diffusion.[/p]

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. B. E. Deal andA. S. Grove,J. Appl. Phys. 36 (1965) 3770.

    Google Scholar 

  2. N. R. Draper andH. Smith, “Applied Regression Analysis”, (Wiley, New York, 1981) Ch. 10.

    Google Scholar 

  3. B. J. Korites, “Data Plotting, Software for Micros” (Kem Publications, Duxbury, Massachusetts).

  4. D. C. Montgomery andE. A. Peck, “Introduction to Linear Regression Analysis”, (Wiley, New York, 1982) p. 88ff.

    Google Scholar 

  5. B. E. Deal, D. W. Hess, J. D. Plummer andC. P. Ho,J. Electrochem. Soc. 125 (1978) 339.

    Google Scholar 

  6. H. Z. Massoud, PhD thesis, Stanford University (1983).

  7. J. R. Ligenza andW. G. Spitzer,J. Phys. Chem. Solids 14 (1960) 131.

    Google Scholar 

  8. K. Hirabayaski andJ. Iwamura,J. Electrochem. Soc. 120 (1973) 1595.

    Google Scholar 

  9. E. A. Irene andR. Ghez,ibid. 124 (1977) 1757.

    Google Scholar 

  10. F. J. Norton,Nature 191 (1961) 701.

    Google Scholar 

  11. R. H. Doremus,J. Phys. Chem. 80 (1976) 1773.

    Google Scholar 

  12. R. R. Razouk, L. N. Lie andB. E. Deal,J. Electrochem. Soc. 128 (1981) 2214.

    Google Scholar 

  13. R. H. Doremus,Thin Solid Films 122 (1984) 191.

    Google Scholar 

  14. N. F. Mott,Proc. R Soc. A376 (1981) 207.

    Google Scholar 

  15. Idem, Phil. Mag. 45 (1981) 323.

    Google Scholar 

  16. B. Borie, C. J. Sparks andJ. V. Cathcart,Acta Metall. 10 (1962) 691.

    Google Scholar 

Download references

Author information

Author notes

  1. Andrew Szewczyk

    Present address: IBM, East Fishkill Facility, Hopewell Junction, 12583, New York

Authors and Affiliations

  1. Materials Engineering Department, Rensselaer Polytechnic Institute, 12180, Troy, New York, USA

    Robert H. Doremus & Andrew Szewczyk

Authors
  1. Robert H. Doremus
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Andrew Szewczyk
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Doremus, R.H., Szewczyk, A. Oxidation of silicon by oxygen: a rate equation. J Mater Sci 22, 2887–2892 (1987). https://doi.org/10.1007/BF01086486

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01086486

Keywords

Search

Navigation