Abstract
The processing of silica in an rf plasma was studied with a new experimental system, the process being carried out entirely in the vapor phase. SiO and Si were obtained by either thermal decomposition of SiO2 or reduction by H2. No other reducing material (which, like C, may become a contaminant) was used. The products were collected along the reactor length and analyzed afterward. Temperatures in the reaction zone were measured spectroscopically. The high reaction rates occurring in the gas phase did compensate for the low residence times. A diffusional model for the buildup of solid reaction products is discussed. Vapor phase plasma reduction of silica with hydrogen proved to be more effective than thermal decomposition and nuch more effective than heterogeneous processing. The efficiency evaluation was made on the laboratory-scale level.
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Abbreviations
- c dSiO :
-
SiO content, % by wt
- c tSi :
-
Total Si content, % by wt
- cSiO e2 :
-
Experimental SiO2 content, % by wt
- cSiO t2 :
-
“Theoretical” SiO2 content, % by wt
- D :
-
Species diffusivity, cm2 · sec−1
- F :
-
Rate of species deposition, mol · cm−2 · sec−1
- MSiO2 :
-
Molar flow of SiO2, mmol · sec−1
- n :
-
Species concentration, cm−3
- P :
-
Anode power, kW
- r :
-
Reaction radius, cm
- R * :
-
Radius of quartz tube, cm
- T :
-
Temperature, K
- T av :
-
Average temperature, K
- USiO t2 :
-
Total extent of SiO2 decomposition, %
- V aAr :
-
Molar flow of axial Ar, mmol · sec−1
- V pAr :
-
Molar flow of peripheral Ar, mmol · sec−1
- VH2 :
-
Molar flow of H2, mmol · sec−1
- y :
-
Molar fraction
- Z :
-
Position of a plane normal to the plasma axis down the lower turn of rf coil, cm
- γ:
-
Molar ratio of SiO over SiO2 in deposit
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Huczko, A., Meubus, P. Rf plasma processing of silica. Plasma Chem Plasma Process 9, 371–386 (1989). https://doi.org/10.1007/BF01083673
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DOI: https://doi.org/10.1007/BF01083673