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Dislocation activity in single crystal Hgl2

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Abstract

An etchant of 5% alcohol in trichloroethylene (TCE) allows greater resolution of dislocation etch pits in vapour-grown single crystals of Hgl2 than the “traditional” alcohol etches. The improved etchant has made possible the identification of etch pits, on the (001) faces of single-crystal Hgl2, that are associated with dislocations on {100}-type slip planes. The evidence for this conclusion includes (a) the geometric and crystallographic features of the etch pits, (b) the manner in which they are induced by deformation, and (c) their regularity in passing through the crystal, perpendicular to the (001) plane.

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Authors and Affiliations

  1. Department of Mechanical and Environmental Engineering, University of California, 93106, Santa Barbara, California, USA

    Timothy W. James & Frederick Milstein

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  1. Timothy W. James
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  2. Frederick Milstein
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This work is based upon part of the Ph.D. dissertation of T. W. James.

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James, T.W., Milstein, F. Dislocation activity in single crystal Hgl2 . J Mater Sci 16, 1167–1170 (1981). https://doi.org/10.1007/BF01033826

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  • DOI: https://doi.org/10.1007/BF01033826

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