Abstract
Ultra-thin (about 15 Å) initial deposits of Bi, Cu, Ag, Sn, Pb, Au and In-Bi solder have been used for subsequent deposition of the GaSb films by a flash evaporation technique. TEM studies reveal that the deposits stimulate grain growth in the films to different extents, with Au giving the best results. Also, the increase in the Au stimulator deposit thickness substantially increased the grain size. The electrical measurements made on the GaSb films grown with or without Au stimulators (below 30 Å) reveal that considerable improvement in the film properties can be obtained by using the stimulator.
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Patel, S.M., Mahajan, M.D. Stimulated crystallization of polycrystalline GaSb films. J Mater Sci 16, 1137–1141 (1981). https://doi.org/10.1007/BF01033823
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DOI: https://doi.org/10.1007/BF01033823