Abstract
In an rf low-pressure HCl plasma NiZn and MnZn ferrite etch up to five times as fast as in an otherwise comparable Ar sputter etch process. Selectivity towards Al2O3 as an etch mask is of order 10. No redeposited material and very little trenching are seen. The etched slopes have a steepness up to 70°, resulting from redeposition and enhanced etching on the sidewalls. This is shown by experiments and by computer simulations.
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Heijman, M.G.J. Reactive sputter etching of magnetic materials in an HCl plasma. Plasma Chem Plasma Process 8, 383–397 (1988). https://doi.org/10.1007/BF01016056
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DOI: https://doi.org/10.1007/BF01016056