Abstract
The effects of base pressure, etch pressure, gas flow rates of HCl, Cl2, and argon, hexode temperature, DC self-bias, initial polysilicon thickness, and percent of overetch on the etch performance of polysilicon are examined. Statistical design of the experiments provided linear and quadratic models of the etch performance in terms of the aforementioned variables. These models were used to determine the relative importance of each process variable on the etch performance. Optical emission data were utilized as a means of endpoint detection and as a monitor of etch activity. The results indicate that the etch performance is more responsive to variations in physical mechanisms as opposed to chemical processes within the variable ranges used in these experiments.
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Tully, L.A., Shohet, J.L., Graham, J.A. et al. A statistical analysis of polysilicon etching in a chlorine-argon plasma. Plasma Chem Plasma Process 8, 349–382 (1988). https://doi.org/10.1007/BF01016055
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DOI: https://doi.org/10.1007/BF01016055