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A perturbation technique to model InGaAs/InP and GaAs FETs for millimeter-wave integrated circuits

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Abstract

A perturbation method is described to analytically model the electrical behavior of submicron FETs for millimeter-wave circuit applications. The approach includes the determination of the two-dimensional potential distribution in a non-rectangular depletion region. The result is used to derive analytical expressions for the threshold voltage and transconductance of FETs.

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Authors and Affiliations

  1. Electrical and Systems Engineering Department, The University of Connecticut, 06269-3157, Storrs, CT, U.S.A.

    Eric Donkor & Faquir C. Jain

Authors
  1. Eric Donkor
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  2. Faquir C. Jain
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Donkor, E., Jain, F.C. A perturbation technique to model InGaAs/InP and GaAs FETs for millimeter-wave integrated circuits. Int J Infrared Milli Waves 11, 869–877 (1990). https://doi.org/10.1007/BF01010139

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  • DOI: https://doi.org/10.1007/BF01010139

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