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Negative FIR-photoconductivity in n-GaAs

  • W. Heisel
  • W. Bohm
  • W. Prettl
Article

Abstract

Negative photoconductivity in n-GaAs has been observed in the far infrared spectral range between 20 and 29 cm−1. Negative photoconductivity occurs when a magnetic field is applied to the samples and impact ionization of shallow donors by the electric bias field is the dominant mechanism of electron excitation to the conduction band. A conceivable model qualitatively explaining the experimental results is proposed, which involves optical transitions from the lowest Landau subband to higher bound states of shallow donors.

Key words

semiconductors epitaxial GaAs far-infrared magnetospectroscopy impact inonization photoconductivity 

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Copyright information

© Plenum Publishing Corporation 1981

Authors and Affiliations

  • W. Heisel
    • 1
  • W. Bohm
    • 1
  • W. Prettl
    • 1
  1. 1.Institut für Angewandte PhysikUniversität RegensburgRegensburgW-Germany

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