Abstract
The article considers the spectral relationship between a-Si(n-type)/c-Si(p-type) devices, which show promise for creation of photosensors for the visible and IR-ranges. It is shown that preheating of the substrate and thermal processing changes the maximum photosensitivity in the 840–1080 nm range.
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Additional information
Translated from Izmeritel'naya Tekhnika, No. 11, pp. 17–20, November, 1995.
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Budagyan, B.G., Aivazov, A.A., Sherchenkov, A.A. et al. Spectral characteristics of photosensitive a-si devices. Meas Tech 38, 1228–1232 (1995). https://doi.org/10.1007/BF00986593
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DOI: https://doi.org/10.1007/BF00986593