Abstract
In this study, the symmetrical copper-phthalocyanine (CuPc) was coated on p-Si wafer by spin-coating method. The photoresponse and electrical properties of the Al/symmetrical CuPc/p-Si structures/diodes were investigated at room temperature using by current–voltage/time (I–V/t) and capacitance/conductance-voltage/frequency (C/G-V/f) measurements under dark and various solar irradiances (between 10 and 100 mW/cm2). The main electronic parameters of the diode, which included ideality factor (n), barrier height (Φb), rectification ratio (RR = IF/IR), series resistance (Rs), and interface states density (Nss) were computed. The experimental results reveal that the photocurrent level of the diodes is controlled by various solar irradiances. The m exponent of the double-logarithmic Iph–P plot was found to be 1.12, confirming linear photoconduction behavior. The Al/symmetrical CuPc/p-Si structure can be used as a photo device/sensor in electro-optic and photonics.
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The datasets generated and/or analyzed during the current study are not publicly available due to that the data also form part of an ongoing study, but are available from the corresponding author on reasonable request.
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Acknowledgments
Authors would like to acknowledge the support of the King Khalid University for this research through grant # RCAMS/KKU/p002-21 under the Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia
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SD contributed to investigation, visualization, writing—review and editing; AGA-S contributed to funding, data curation, writing—review and editing; AY contributed to writing—review and editing; MI contributed to writing—review and editing; AD contributed to experiment, writing—review and editing; AAA-G contributed to experiment, data, validation; FY contributed to conceptualization, instrumentation, validation, writing—review and editing.
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Demirezen, S., Al-Sehemi, A.G., Yüzer, A. et al. Electrical characteristics and photosensing properties of Al/symmetrical CuPc/p-Si photodiodes. J Mater Sci: Mater Electron 33, 21011–21021 (2022). https://doi.org/10.1007/s10854-022-08906-2
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DOI: https://doi.org/10.1007/s10854-022-08906-2