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Switching of weak-signal transistor interrupters

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Measurement Techniques Aims and scope

Conclusions

In weak-signal converter circuits with germanium transistors it is advisable to use double-pole control, since this increases the conversion coefficient, whereas the zero level drift is virtually independent of the switching method. In converter circuits with silicon transistors single-pole control should be used, since this reduces substantially the zero level, whereas the conversion coefficient does not change.

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Literature cited

  1. J. Palmer, Spikes on chopper transistor waveforms, Electronic Eng.,34, No. 409, March (1962).

  2. G. Meyer-Brotz, Eigenschaften und Anwendungen von Flachentransistoren als Schalter, Telefunken Zeitung, Bd. 33, H. 128, June (1960).

  3. W. Schneider, Der Transistor als genauer elektronischer Schalter, Nachrichtentechn. Fachberichte, Bd. 18, April (1960).

  4. D. Georgis and K. Thompson, “Characteristics of silicon transistors in interrupter circuits” in a collection entitiled Transistorized Electronic Circuits. Editor A A. Sokolov [Russian translation from English] IL (1959).

  5. V. I. Anisimov and A. P. Golubev, Transistor Modulators [in Russian], “énergiya” Press (1964).

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Anisimov, V.I., Golubev, A.P. Switching of weak-signal transistor interrupters. Meas Tech 9, 644–646 (1966). https://doi.org/10.1007/BF00975219

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  • DOI: https://doi.org/10.1007/BF00975219

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