Abstract
The results of comparative investigations of assemblies of series-connected IGBT transistors (IRGPS60B120KD) with control circuits that are based on pulse transformers and ADuM21N microcircuits, which have a high insulation strength, are presented. The conditions for efficient switching of high-power current pulses with a submicrosecond rise time are determined. A small switch with an operating voltage of 12 kV that consists of two parallel-connected transistor assemblies is described. It provides switching of microsecond current pulses with an amplitude of 500 A and a rise time of 200 ns at a frequency of 100 Hz under natural cooling. The possibility of scaling the results is shown.
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References
Analog Devices. 5.0 kV rms, Single Channel Digital Isolator. Data sheet. ADuM210N. www.analog.com
International Rectifier. Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Data sheet. IRGPS60B120KD. www.irf.com
Korotkov, S.V., Aristov, Y.V., Zhmodikov, A.L., Kozlov, A.K., Korotkov, D.A., Kuznetsov, A.S., and Meshalkina, M.N., Instrum. Exp. Tech., 2016, vol. 59, no. 3, p. 356. doi 10.7868/S0032816216020221
Grekhov, I.V., Kozlov, A.K., Korotkov, S.V., and Stepanyantz, A.L., Instrum. Exp. Tech., 2002, vol. 45, no. 5, p. 668.
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Original Russian Text © S.V. Korotkov, Yu.V. Aristov, A.L. Zhmodikov, A.K. Kozlov, D.A. Korotkov, 2018, published in Pribory i Tekhnika Eksperimenta, 2018, No. 1, pp. 42–47.
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Korotkov, S.V., Aristov, Y.V., Zhmodikov, A.L. et al. Switches of High-power Current Pulses with a Submicrosecond Rise Time on the Basis of Series-connected IGBT Transistors. Instrum Exp Tech 61, 38–43 (2018). https://doi.org/10.1134/S0020441218010177
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DOI: https://doi.org/10.1134/S0020441218010177