Abstract
A study is made of switching in semiconductor devices with an S-type characteristic in which the phenomenon of instability is due to dependence of the depth of local impurity levels on the free-carrier concentration. A switching mechanism connected with the formation of a nucleus of the new phase is considered. The concentration distributions and the characteristic dimensions of the nucleus are calculated.
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Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 140–143, February, 1976.
The author wishes to thank V. L. Bonch-Bruevich, A. B. Mironov, and A. G. Khachaturyan for a useful discussion on the results of the work.
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Dneprovskaya, T.S. Theory of switching in systems with concentration instability. Soviet Physics Journal 19, 246–248 (1976). https://doi.org/10.1007/BF00942877
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DOI: https://doi.org/10.1007/BF00942877