Abstract
A study has been made of the dependence of the crystal lattice parameter and the structural perfection of epitaxial layers of InxGa1−xAs on substrates of GaAs and InP and on the composition of the solid solution. The electrophysical properties of layers of various compositions have been studied. From measurements of the photoluminescence spectra, a determination has been made of the dependence of the width of the forbidden band on the composition of the layers.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 46–50, February, 1992.
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Vilisova, M.D., Bobrovnikova, I.A., Teterkina, I.V. et al. Structure and properties of epitaxial layers of InxGa1−xAs grown from the gas phase. Soviet Physics Journal 35, 136–139 (1992). https://doi.org/10.1007/BF00936866
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DOI: https://doi.org/10.1007/BF00936866