Characterization of impulse-fritting procedures of contacts by measuring 1/f noise

Abstract

Experimental investigations show that the 1/f noise intensityC and the contact resistanceR can be used to analyse contacts. The simply prepared contacts are fritted by discharging a capacitor, resulting in a multi-spot contact. A model relatesC andR to a number of contact spotsk with radiusa. More impulse-frittings at increasing energies decreaseC andR, thus enhancing the values ofk anda. From experimentalC vsR plots two regions are determined for GaAs: A fritting (a=constant) and A+B fritting (a∝k). Calculated values ofk are in good agreement with the number of peaks or pits formed by etching the semiconductor surface. From experimentalC vsW orR vsW curves, withW the cumulative impulse-fritting energy, the conclusion can be made thatka ³ is proportional toW.