Abstract
The magnetostriction of Fe2+ ions introduced by Si4+ in YIG, has been measured at low temperatures by means of strain gauges. It is substantially larger at 77°K than at 4°K. This is explained by electron migration at elevated temperatures, leading to a decrease in perturbing potential of the Si ions by a factor two.
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Research sponsored by the Joint Services Electronics Program through the Air Force Office of Scientific Reserch under Contract F 44620-71-C-0067.
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Mack, D.R., Smit, J. Magnetostriction of Si-doped YIG at low temperatures. Appl. Phys. 2, 23–25 (1973). https://doi.org/10.1007/BF00900487
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DOI: https://doi.org/10.1007/BF00900487