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Scattering mechanism in doped semiconductors with a smooth random field

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The scattering mechanism of charge carriers in doped compensated semiconductors with a smooth random field is considered in the interval of temperatures 4–100°K and of impurity concentrations 1014–1018 cm−3. It is shown that in the conditions mentioned above at the lowest temperatures scattering in the Coulomb field associated with charged impurity dominates, while at elevated temperatures scattering in the smooth random field is important. Scattering by phonons and by resonant and virtual levels associated with the random potential is insignificant in the present conditions.

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Authors and Affiliations

  1. All-Union Scientific-Research Institute of FTRI, USSR

    N. M. Khamidullina

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  1. N. M. Khamidullina
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 23–27, February, 1984.

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Khamidullina, N.M. Scattering mechanism in doped semiconductors with a smooth random field. Soviet Physics Journal 27, 102–105 (1984). https://doi.org/10.1007/BF00900126

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  • DOI: https://doi.org/10.1007/BF00900126

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